PART |
Description |
Maker |
CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE. TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 8A条一(c)|1
|
Vicor, Corp. Marktech Optoelectronics
|
2SB688 2SB688O 2SB688R |
POWER TRANSISTORS(8A/120V/80W) TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 8A I(C) | TO-247VAR POWER TRANSISTORS(8A,120V,80W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
2SA1425 2SA1425Y |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SC-71 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SA1358Y 2SA1358 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126VAR 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 1A条一(c)|26VAR
|
TOSHIBA
|
2SB649AC 2SB649D 2SB649B |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 1.5AI(丙)|126
|
Glenair, Inc.
|
CENW51 CENW57 CENW51A CENW55 CENW56 CENW92 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1A I(C) | TO-237VAR TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-237VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237VAR TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-237VAR TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-237VAR TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-237VAR 晶体管|晶体管|进步党| 300V五(巴西)总裁| 500mA的一(c)|37VAR
|
SMSC, Corp.
|
D1103 D3232 D45D1 D43D6 D45D3 D45D5 DG189AP/883B D |
Refresh Counter TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 4A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3 Non-Muxed Address DRAM Muxed地址内存 Analog Switch 模拟开 Peripheral Miscellaneous 周边杂项
|
Intersil, Corp. Rochester Electronics, LLC
|
CSB737R CSB737Q CSA1048GR CSB564AO CSA1266O CSA104 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 300MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-92 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 晶体管|晶体管|进步党| 50V五(巴西)总裁| 150毫安一(c)|2
|
Vishay Intertechnology, Inc.
|
ECG130MP ECG152 ECG153 ECG155 ECG153MP ECG159MCP E |
Finger guards Round type - suction side - Adaptation machine-Frame size : 200mm; Surface Finishing: Cation electropainting; Adaptation Machine: San Ace 200(suction side); TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-3VAR TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-220AB TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1A条一(c)|2 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 晶体管|晶体管|进步党| 32V的五(巴西)总裁| 1A条一(c)|
|
TE Connectivity, Ltd. Aeroflex, Inc.
|
2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53 TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36 Open-Drain SOT µP Reset Circuit TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 60mA的一(c)|1 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五(巴西)总裁| 350mA的一(c)| TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五(巴西)总裁| 10A条一(c)|个STR - 1 / 4 Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|